Controlled synthesis of single-crystalline InN nanorods

Single-crystalline InN nanorods were successfully grown on c-Al2O3, GaN, Si(111), and Si(100) substrates by non-catalytic, template-free hydride metal–organic vapour phase epitaxy (H-MOVPE). It was evaluated thermodynamically and confirmed experimentally that the domain of nanorod growth lies in the vicinity of the growth–etch transition. Stable gas phase oligomer formation is suggested as the nucleation mechanism for InN nanoparticle generation. Dislocation-free, high-quality InN nanorods with [00.1] growth axis were formed via an apparent solid–vapour growth mechanism. The nanorod diameter, density, and orientation were controlled by growth temperature, substrate selection, and HCl/TMIn and N/In inlet molar ratios. S Supplementary data are available from stacks.iop.org/Nano/18/135606